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| AP02N90H/J Pb Free Plating Product Advanced Power Electronics Corp. Simple Drive Requirement Low On-resistance Fast Switching Characteristics G N-CHANNEL ENHANCEMENT MODE POWER MOSFET D BVDSS RDS(ON) ID 900V 7.2[ 1.9A Description S GD The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-252 package is universally preferred for all commercialindustrial applications at power dissipation levels to approximately 50 watts. The through-hole version (AP02N90J) is available for lowprofile applications. S TO-252(H) G DS TO-251(J) Absolute Maximum Ratings Symbol VDS VGS ID@TC=25J ID@TC=100J IDM PD@TC=25J EAS IAR TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, V GS @ 10V Continuous Drain Current, V GS @ 10V Pulsed Drain Current 1 Rating 900 30 1.9 1.2 6 62.5 0.5 2 Units V V A A A W W/J mJ A J J Total Power Dissipation Linear Derating Factor Single Pulse Avalanche Energy Avalanche Current Storage Temperature Range Operating Junction Temperature Range 36 1.9 -55 to 150 -55 to 150 Thermal Data Symbol Rthj-c Rthj-a Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max. Max. Value 2.0 110 Units J /W J /W Data & specifications subject to change without notice 200418063-1/4 AP02N90H/J Electrical Characteristics@Tj=25 C(unless otherwise specified) Symbol BVDSS GB VDSS/G Tj o Parameter Drain-Source Breakdown Voltage Test Conditions Min. 900 2 - Typ. 0.8 2 12 2.5 4.7 10 5 18 9 630 40 4 Max. Units 7.2 4 10 100 100 20 1000 V V/J [ V S uA uA nA nC nC nC ns ns ns ns pF pF pF VGS=0V, ID=1mA Breakdown Voltage Temperature Coefficient Reference to 25J , ID=1mA Static Drain-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current (Tj=25oC) Drain-Source Leakage Current (Tj=125oC) RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss VGS=10V, ID=0.85A VDS=VGS, ID=250uA VDS=10V, ID=1.9A VDS=900V, VGS=0V VDS=720V, VGS=0V VGS=30V ID=1.9A VDS=540V VGS=10V VDD=450V ID=1.9A RG=10[, VGS=10V RD=236[ VGS=0V VDS=25V f=1.0MHz Gate-Source Leakage Total Gate Charge 3 Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance 3 Source-Drain Diode Symbol VSD trr Qrr Parameter Forward On Voltage 3 Test Conditions IS=1.9A, VGS=0V IS=1.9A, VGS=0V, dI/dt=100A/s Min. - Typ. 360 1.8 Max. Units 1.3 V ns C Reverse Recovery Time Reverse Recovery Charge Notes: 1.Pulse width limited by safe operating area. o 2.Starting Tj=25 C , VDD=50V , L=20mH , RG=25[ , IAS=1.9A. 3.Pulse width <300us , duty cycle <2%. 2/4 AP02N90H/J 2.0 1.25 T C =25 o C 1.6 ID , Drain Current (A) 1.2 ID , Drain Current (A) 10V 8.0V 6.0V 5.0V T C =150 o C 1.00 10V 8.0V 6.0V 5.0V V G =4.5V 0.75 0.8 0.50 0.4 V G =4.5V 0.25 0.0 0.00 0 3 6 9 12 15 18 0 3 6 9 12 15 18 V DS , Drain-to-Source Voltage (V) V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 1.2 2.8 2.4 1.1 Normalized BVDSS (V) Normalized R DS(ON) 2.0 I D = 0.85 A V G =10V 1.6 1.0 1.2 0.8 0.9 0.4 0.8 -50 0 50 100 150 0.0 -50 0 50 100 150 Junction Temperature ( C) o T j , Junction Temperature ( C ) o Fig 3. Normalized BVDSS v.s. Junction Temperature 2.0 1.6 Fig 4. Normalized On-Resistance v.s. Junction Temperature 1.5 Normalized VGS(th) (V) T j =150 o C IS(A) 1.0 T j =25 o C 1.2 0.8 0.5 0.0 0 0.2 0.4 0.6 0.8 1 1.2 0.4 -50 0 50 100 150 V SD , Source-to-Drain Voltage (V) T j ,Junction Temperature ( o C) Fig 5. Forward Characteristic of Reverse Diode Fig 6. Gate Threshold Voltage v.s. Junction Temperature AP02N90H/J f=1.0MHz 14 1000 12 I D = 1.9 A V DS = 180 V V DS = 360 V V DS = 540 V C (pF) C iss VGS , Gate to Source Voltage (V) 10 100 8 C oss 6 10 4 C rss 2 0 0 4 8 12 16 1 1 5 9 13 17 21 25 29 Q G , Total Gate Charge (nC) V DS , Drain-to-Source Voltage (V) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 10.00 1 Normalized Thermal Response (R thjc) DUTY=0. 10us 1.00 0.2 ID (A) 100us 1ms 0.1 0.1 0.05 PDM 0.10 T C =25 o C Single Pulse 0.01 0.1 1 10 100 10ms 100ms DC t 0.02 T Duty factor = t/T Peak Tj = PDM x Rthjc + TC 0.01 SINGLE 0.01 1000 10000 0.00001 0.0001 0.001 0.01 0.1 1 10 V DS , Drain-to-Source Voltage (V) t , Pulse Width (s) Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance VDS 90% VG QG 10V QGS QGD 10% VGS td(on) tr td(off) tf Charge Q Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform |
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